| 摘要 |
<p>Method for forming a semiconductor memory device with a recessed gate. A substrate (208), having a plurality of deep trench capacitors (206) therein, is provided wherein upper portions of the deep trench capacitor devices are revealed. Spacers (226) on sidewalls of the upper portions of the deep trench capacitors are formed to form a predetermined region surrounded by the deep trench capacitor devices. The predetermined region of the substrate is etched using the spacers and the upper portions of the deep trench capacitors serve as a mask to form a recess (228), and a recessed gate (230,232) is formed in the recess.</p> |
