Silicon carbide FETs

摘要

Proposed are SiC field-effect transistors with source, gate and drain contacts and in which the source contacts are located on the surface of the semiconductor wafer, the drain contacts on the underside of the wafer and the gate contacts in trench-like structures, the trench-like structures surrounding the source electrodes of the transistors in the shape of a ring and the gate contacts being connected to each other on the floors of the trenches.