| 摘要 |
A method for constructing the charge storage electrode of a semiconductor memory device. The method can minimize the cell area of the semiconductor memory device by making a contact mask in no consideration of the distance between a contact for the charge storage electrode and a gate electrode, forming the contact for the charge storage electrode by use of the contact mask, and making the contact smaller than on the mask by means of a spacer insulating film so as to secure a distance between the contact and the gate electrode. The method also maximizes the capacity of the semiconductor memory device by forming the charge storage electrode into a double or triple structure and making the distance between the neighboring charge storage electrodes shorter than in a photo developing technique. Therefore, the capacity of the semiconductor memory device is maximized, accomplishing the high integration of the semiconductor memory device in accordance with the present invention.
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