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发明名称
ION IMPLANTATION
摘要
申请公布号
JPH07211279(A)
申请公布日期
1995.08.11
申请号
JP19940000538
申请日期
1994.01.07
申请人
RYODEN SEMICONDUCTOR SYST ENG KK;MITSUBISHI ELECTRIC CORP
发明人
MIYOSHI HITOSHI;SOGAWA MASAO
分类号
H01L21/265;G21K5/00;G21K5/04;H01J37/317;(IPC1-7):H01J37/317
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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