| 摘要 |
PURPOSE:To provide a semiconductor light-emitting element with high perfor mance which can adjust the width of an active layer with an improved controllability, optimize the joint area of a buried part, carrier concentration etc., reduce contact resistance, and perform a high-speed modulation. CONSTITUTION:In the element which consists of InGaAsP material, has an active layer 12 contributing to emission of light with a wider inhibited band than itself, and is in a double heterostructure which is sandwiched by two types of semiconductor layers 11 and 15 with opposite conduction type in upper and lower parts, areas near both sides of the active layer 11 are buried by the semiconductor layer 15 and an insulation region sandwiched by the semiconductor layers 11 and 15 is formed near both sides of the buried part consisting of the buried semiconductor layer 15. |
