| 摘要 |
PURPOSE: To increase the DC current gain of a conductor-insulator-semiconductor transistor by providing a 2nd conductive layer, provided with a conductor-made emitter and a base and a collector made of method on an oxide pad with a thin surface of the surface of a 1st conductive layer, including a trench filled with an insulator on a substrate. CONSTITUTION: A trench is formed, penetrating an n<+> -silicon layer 104 grown on the substrate 102 and filled with an insulator layer of SiO2 , and then an insulator plug 110 is left. On the layer 104 and a plug 110, a layer 112 of Si1-2 Ge2 (0.1<=z<=0.9) is doped with a p-type dopant, such as boron to 1×10<15> to 10<16> cm<-3> concentration. In the region of the layer 112, a base contact region 114 is demarcated by photolithography, and ions are injected into both the Si1-z Gez layer 112 and n-type Si layer 104 with an n-type dopant to form a collector region. The thin oxide pad 122 is left and a layer of p<+> -polycrystalline silicon, etc., is deposited to constitute an emitter 130, thus completing the CIS.
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