| 摘要 |
PURPOSE: To manufacture an LDD element, without the use of a sidewall spacer as an ion-implantation barrier layer by forming a larger of a heat sensitive fluid material, and then heat-treating it. CONSTITUTION: A gate insulating film 2, a gate electrode 3a, a conductive layer 3 and a heat sensitive fluid material layer 4 which temporarily becomes a flowing condition by heating are formed on a semiconductor substrate 1. The heat sensitive fluid material layer 4 and the conductive layer 3 are etched to form BPSG layer 4a/gate electrode 3a, having the same pattern. After a first ion-implantation for formation of a lightly doped drain has been carried out into the substrate, heat treatment is performed to flow the heat sensitive fluid material layer on a gate wiring pattern, so that a crosssection which is parallel to the semiconductor substrate is made larger than the original area. Then source/drain regions are formed by a secondary ion-implantation, thus manufacturing a MOS field effect transistor containing lightly doped drain.
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