Process for producing single crystal silicon carbide layer.

摘要

To produce a monocrystalline SiC layer, silicon carbide (4, 5) is allowed to grow on one side of a monocrystalline silicon substrate layer (1) by atomic layer epitaxy until the desired layer thickness has been reached. Heating is then continued and the Si substrate layer (1) is removed by melting off, evaporation or etching.