发明名称 |
Interconnect structures having tantalum/tantalum oxide layers |
摘要 |
A method of fabricating a high-density multilayer copper/polyimide interconnect structure utilizing a blanket tantalum/tantalum oxide layer that electrically connects all of the electroplating seed layers to the edge of the substrate; upon completion of the electroplating process, the excess tantalum/tantalum oxide layer is etched off to produce isolated conductor lines. A multilayer copper/polyimide interconnect structure may be fabricated by repeating this fabrication sequence for each layer.
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申请公布号 |
US5436504(A) |
申请公布日期 |
1995.07.25 |
申请号 |
US19930064794 |
申请日期 |
1993.05.19 |
申请人 |
THE BOEING COMPANY |
发明人 |
CHAKRAVORTY, KISHORE K.;TANIELIAN, MINAS H. |
分类号 |
H01L21/288;H01L21/48;H01L21/768;(IPC1-7):H05K1/02 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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