发明名称 Interconnect structures having tantalum/tantalum oxide layers
摘要 A method of fabricating a high-density multilayer copper/polyimide interconnect structure utilizing a blanket tantalum/tantalum oxide layer that electrically connects all of the electroplating seed layers to the edge of the substrate; upon completion of the electroplating process, the excess tantalum/tantalum oxide layer is etched off to produce isolated conductor lines. A multilayer copper/polyimide interconnect structure may be fabricated by repeating this fabrication sequence for each layer.
申请公布号 US5436504(A) 申请公布日期 1995.07.25
申请号 US19930064794 申请日期 1993.05.19
申请人 THE BOEING COMPANY 发明人 CHAKRAVORTY, KISHORE K.;TANIELIAN, MINAS H.
分类号 H01L21/288;H01L21/48;H01L21/768;(IPC1-7):H05K1/02 主分类号 H01L21/288
代理机构 代理人
主权项
地址