| 摘要 |
PURPOSE:To obtain a semiconductor device in which a memory mechanism is provided without reducing the wiring size as much as possible. CONSTITUTION:A first n-type semiconductor region 11, a p-type semiconductor region 12 and a second n-type semiconductor region 13 are formed on a one conductivity type semiconductor substrate 10. Assuming a unit region as one cell, the cells are isolated by an insulating film 14. The first n-type semiconductor region 11 and the p-type semiconductor region 12 are eletrically connected, respectively, with a bit line 15 and a word line 16 for writing. The second n-type semiconductor region 13 is connected with a Schottky contact data line 17 for reading. This structure reduces the charge storage area per cell and allows a margin in size at each part including the metal wiring thus realizing a high integration semiconductor device having a memory mechanism. |
