发明名称 |
Potential sensor employing electrooptic crystal and potential measuring method |
摘要 |
A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10+1 OMEGA cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used. The high-resistance compound semiconductor 12 is also required to have a large electrooptic constant and a resistivity of 105 OMEGA cm or more.
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申请公布号 |
US5434698(A) |
申请公布日期 |
1995.07.18 |
申请号 |
US19930094907 |
申请日期 |
1993.07.20 |
申请人 |
DAI NIPPON PRINTING CO., LTD. |
发明人 |
TAKANO, ATSUSHI;UTSUMI, MINORU;OBATA, HIROYUKI |
分类号 |
G01R1/07;G01R15/24;(IPC1-7):G02F1/015;G01R31/00 |
主分类号 |
G01R1/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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