发明名称 |
Two-transistor dynamic random-access memory cell having a common read/write terminal |
摘要 |
A two transistor dynamic random access memory can be treated as a pair of voltage controlled elements which are reversibly controlled in a three step process. In the first step, a capacitance is charged on the controlling terminal of memory transistor. The second step entails isolating the charge on the capacitance of the controlling terminal. The third step entails providing a reversibly controlled voltage on the controlling terminal to further control the two memory transistors without altering the charge of the capacitance. This allows a non-destructive reading of the output of the stored information signal.
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申请公布号 |
US5434816(A) |
申请公布日期 |
1995.07.18 |
申请号 |
US19940264828 |
申请日期 |
1994.06.23 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
LEVI, MARK W. |
分类号 |
G11C11/403;G11C11/405;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/403 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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