| 摘要 |
PURPOSE:To decrease a grain size distribution in the micranization by heat treatment by specifying a temp. of a substrate at the time of forming an amor phous thin film on the substrate. CONSTITUTION:A sputtering device 7 is composed of a target 1 made of a metal, the target 2 made of an amorphous material, a substrate 3, a substrate holder 4 and high-frequency power sources 5 and 6 supplying high frequency power to each targets 1 and 2. The sputtering is executed by supplying the high-frequency power to form the amorphous thin film in which a metal is dispersed. Au is used as the metal used to the target 1, Al2O3 is used as the amorphous material used for the target 2 and a quartz glass is used as the substrate 3. In this case, the temp. of the substrate at the time of forming the amorphous thin film on the substrate is set at room temp. to 200 deg.C. In this way, a nonlinear optical material excellent in nonlinear optical characteristic is produced easily. That is, a metal or a semiconductor is dispersed uniformly in the thin film without being atomized.
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