PRODUCTION OF THIN FILM OF DIELECTRIC MATERIAL AND PRODUCTION DEVICE THEREFOR

摘要

PURPOSE:To obtain a thin film of (Pb1-xLax)Ti1-x/4O3 having excellent crystallizability by more thinning the film than by a conventional method, by improving crystallizability of a coating film in an initial state of growth. CONSTITUTION:Metal targets of Pb, Ti and La are used and each target is irradiated with an Ar ion beam and sputtered to form a PLT thin film having 200 angstrom film thickness as a buffer layer on a MgO base 4 in an oxygen gas atmosphere (<6X10<-5>Torr). A PLT thin film having 800 angstrom is formed on the buffer layer by magnetron sputtering method under a film-forming condition of RF powers =900W, base temperature =590OC, gas pressure =0.1Pa and a gas flow ratio of Ar/O2=25/1sccm/seem.