Conducting electrode layers for ferroelectric capacitors in integrated circuits and method.

摘要

A ferroelectric capacitor for an integrated circuit includes a stack formed by a layer (10a) of a noble metal, a layer (20a) of a conducting oxide, a layer (30) of a ferroelectric material, another layer (20b) of a conducting oxide and another layer (10b) of a noble metal. The capacitor can also have another layer (20c) of conducting oxide located over the top layer of noble metal and below (20d) the first layer of the noble metal. A method of forming the same through establishing one layer over the other and annealing each layer is also disclosed.