发明名称 |
Semiconductor laser device with multi-directional reflector arranged therein |
摘要 |
A microcavity semiconductor laser disclosed therein includes a double-heterostructure section including an intermediate active layer sandwiched between a first or lower cladding layer and a second or upper cladding layer above a semiconductive substrate. A first multi-layered reflector section is arranged between the substrate and the double-heterostructure section to have its reflectance which becomes maximum near the oscillation wavelength of the laser. The upper cladding layer is semi-spherically formed. A three-dimensional optical reflector covers the double-heterostructure section, for controlling spontaneous emission obtained in the double-heterostructure section along various directions, and for increasing the coupling ratio of spontaneous emission with a specific laser mode, thereby to decrease the threshold current.
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申请公布号 |
US5432812(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19930089093 |
申请日期 |
1993.07.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUROBE, ATSUSHI;TEZUKA, TSUTOMU;SADAMASA, TETSUO;KUSHIBE, MITSUHIRO;KAWAKYU, YOSHITA |
分类号 |
H01S5/10;H01S5/12;H01S5/183;H01S5/20;H01S5/22;H01S5/227;H01S5/323;H01S5/40;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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