| 摘要 |
A method and structure for manufacturing a self-aligned contact, for connecting conductive lines to active regions in a silicon substrate, is described. There is a first insulating layer over the silicon substrate, with openings over the active regions. A barrier metal layer is formed over the active regions, along surfaces of the openings, and over a portion of the horizontal surfaces of the first insulating layer in the region adjacent to the openings. There is a refractory metal layer over the barrier metal layer. Conductive lines are self-aligned over the barrier metal layer and over the refractory metal layer. Sidewall spacers are formed adjacent to the conductive lines and over those regions of the refractory metal layer not covered by the conductive lines.
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