| 摘要 |
<p>PURPOSE:To lessen the signal abnormality generated in a level shifter by specifying the size ratios of transistors connected to a high-voltage power source side of the level shfiter and the transistors (TRs) connected to a low-voltage power source side to suitable size ratios at which the signal abnormality hardly arises. CONSTITUTION:The signal abnormality is prevented by size setting of the TRs of the level shifter 11. Namely, the TFT sizes are so set that the on-resistance of the N channel thin-film transistors (TFTs) 13, 15 is not higher than the on-resistance of the P channel TFTs 14, 16. For example, the gate width of the N channel TFTs 13, 15 is larger than the gate width of the P channel TFTs 14, 16 if the gate length of the N channel TFTs 13, 15 and the gate length of the P channel TFTs 14, 16 are the same. The gate length of the N channel TFTs 13, 15 is made smaller than the gate length of the P channel TFTs 14, 16 if the gate widths of the P channel TFTs 14, 16 and the N channel TFTs 13, 15 are the same.</p> |
