| 摘要 |
PURPOSE:To decrease the demand by prolonging memory retaining time and setting a refresh cycle longer, by suppressing junction leakage generated in the end part of a LOCOS oxide film. CONSTITUTION:When a LOCOS oxide film 2 is formed on a p-type silicon substrate 1, defects 3 are generated in the end part of the LOCOS. At this time, the region of the LOCOS oxide film is formed wider than before. After that a gate oxide film 4 is formed, and a gate 5 is formed. Next an oxide film 6 is deposited, and a resist 7 is formed after that. Next the oxide film 6 is dry-etched to form a memory node contact 8. On this occasion, defects 3 generated under the LOCOS oxide film are removed. Next polysilicon is deposited, and etching is performed after resist patterning to form a memory node 9. Next an ONO film 10 and a plate electrode 11 are formed, and a layer insulating film 12 is deposited after that. |
