发明名称 |
Diamond film and method of producing same |
摘要 |
A method for making a quasi-single crystal diamond is provided. Small diamond granules, like islands, are epitaxially grown on a single crystal substrate having a lattice constant which is similar to that of diamond. A deposition layer is formed on the island diamond granules. The initial substrate is eliminated. Diamond is grown on the deposition layer having diamond granules to make a diamond film having a certain thickness. The initially-grown diamond granules which have the same crystallographical direction align the direction of crystals of the latter-grown diamond by playing a role of seed crystals.
|
申请公布号 |
US5427053(A) |
申请公布日期 |
1995.06.27 |
申请号 |
US19920936838 |
申请日期 |
1992.08.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TSUNO, TAKASHI;FUJIMORO, NAOJI |
分类号 |
C30B25/18;C30B25/02;C30B29/04;(IPC1-7):C30B25/02;C30B25/22 |
主分类号 |
C30B25/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|