| 摘要 |
<p>PURPOSE:To enable the transfer of desired patterns at desired pattern widths and decreased stages with a phase shift mask of a chromium-less system. CONSTITUTION:At least a part of the edges of phase shifters 3 consisting of a transparent material formed on a transparent substrate 1 are provided with dummy pattern edges 4 formed of a part of the phase shifters 3 so as to exist along the edges. The patterns in the edge parts of the phase shifters 3 are erased or the pattern width is made finer by changing the intervals of the edges of the dummy patterns 4 and the phaseg shifters, by which the exposing stage is simplified and the degree of freedom of pattern formation is enhanced.</p> |
