| 摘要 |
PURPOSE: To achieve complete etching cleaning, while using little nitrogen trifluoride by contacting a semiconductor material under the specified range of pressure and output in an electric anode diluent with the plasma of nitrogen trifluoride in specified concentration and nitrogen trifluoride. CONSTITUTION: This semiconductor material is contacted under pressure in the range of almost 600 to 1700 m Torr and pressure in the range of almost 0.4 to 1.4 w/cm<2> in the nitrogen trifluoride almost from 10 to 25% and the electrid anode diluent stronger than nitrogen trifluoride. The experiment is performed by a parallel plate plasma-etching reactor 10. The reactor 10 is provided with two stainless steel electrodes 12 and 14. An RF output 20 of 13.56 MHz is sent out. NF3 24, Ar 26 and N2 28 gas are sent out through a mixing pipe 22 to the reactor 10. The reactor 10 is exhausted through a vacuum piping 30 by a molecule absorptive vacuum pump 32. The base pressure of reactor 10 is controlled, while using a flow limit throttle valve 34. A sample is directly placed on the lower electrode 14.
|
