Shorted-anode semiconductor device and methods of making the same.,申请号EP19890117033-传众专利搜索

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发明名称	Shorted-anode semiconductor device and methods of making the same.
摘要
申请公布号	EP0366916(B1)	申请公布日期	1995.06.14
申请号	EP19890117033	申请日期	1989.09.14
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	MATSUDA, HIDEO C/O INTELLECTUAL PROPERTY DIVISION;YOSHIDA, TAKEOMI C/O INTELLECTUAL PROPERTY;FUJIWARA, TAKASHI C/O INTELLECTUAL PROPERTY DIVSN
分类号	H01L21/332;H01L29/08;(IPC1-7):H01L29/08;H01L29/744	主分类号	H01L21/332
代理机构		代理人
主权项
地址

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