| 摘要 |
A semiconductor device includes a semiconductor substrate, an insulation film formed on the semiconductor substrate, a film formed on the insulation film having a side wall, and a side wall film formed on the insulation film so as to surround the side wall of the film. The side wall film has a slope and satisfies a condition a>d, where a is a width of a bottom surface of the side wall film which is in contact with the insulation film, and d is a thickness of the film.
|
