| 摘要 |
PCT No. PCT/DE92/00358 Sec. 371 Date Nov. 4, 1993 Sec. 102(e) Date Dec. 30, 1993 PCT Filed May 7, 1992 PCT Pub. No. WO92/20105 PCT Pub. Date Nov. 12, 1992.A position-sensitive semiconductor detector is provided having a completely depleted primary area of a first conductivity and insulation layers on the two main surfaces as well as conductive electrodes on the insulation layers (MIS structure). The invented detector is distinguished by the following features: a) the areas of the first and second conductivity on the two main surfaces required for the depletion of the primary area of the first conductivity are generated by the development of inversion and accumulation zones in the surface area under the MIS contacts from which the influenced signal charge is simultaneously tapped; b) the areas of the first and second conductivity on the two main surfaces required for the depletion of the primary area of the first conductivity are completely enclosed by areas of the opposite conductivity, which are developed by accumulation and inversion of charge carriers and their conductivity is controlled via MIS contacts; and c) an external voltage supply to the areas of the first and second conductivity ensues from the areas of the first and second conductivity, which are both preferably in the area of one of the two main surfaces. Furthermore, the production of the detector structure can be realized in three masking steps.
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