| 摘要 |
PURPOSE: To obtain an inactivated P-N junction with superior performance by allowing the P-N junction to cross an oxide sidewall, have a flat shape in a mesa, and have a projecting and recessed waveform in the neighborhood of the mesa sidewall. CONSTITUTION: Each mesa is constituted of upper silicon nitride layer 18, lower N<+> -region 14, and lower wafer P-region 12. Also, a P-N junction 10 in each mesa is extended across the full case of the mesa, allowed to cross the side wall face of an oxide layer 26, substantially have a flat shape in the mesa, and have a projecting and recessed waveform in the neighborhood of the mesa sidewall. Furthermore, the waveform is similar to a cosine function wave in at least 0.5 or 1.5 periods. Also, the oxide layer 26 has about 0.5 micron thickness or more. Thus, a semiconductor device having superior inactivated P-N junction 10 can be formed. |
