| 摘要 |
A gallium arsenide film or an aluminum gallium arsenide film is patterned through a process sequence comprising the steps of: covering the gallium arsenide film with a mask layer of indium gallium phosphide, indium gallium arsenide or indium gallium arsenic phosphide, etching a part of the mask layer in a gaseous etchant containing chlorine gas under radiating an electron beam onto the part of the mask layer for forming an etching mask, and etching a part of the gallium arsenide in the gaseous etchant, wherein one of the composition and the thickness of the mask layer is regulated in such a manner that crystal defects due to lattice mis-match are restricted, thereby preventing the gallium arsenide film from undesirable large side etching.
|
