| 摘要 |
PURPOSE:To obtain resistors of even and high resistances while increasing the scale of integration by forming the resistors requiring accurate ratios of resistance values in the mutually the same shape at the time of providing the plural resistors composed of polycrystalline Si on a semiconductor substrate. CONSTITUTION:Resistors 305 composed of polycrystalline Si are formed via SiO2 film 302 on the surface of a semiconductor substrate 301 and are then covered with a SiO2 film 303, which is provided with openings and the Al electrodes 306 connecting to the resistors 305 are mounted. At this time, even if the two-dimensional configurations of the resistors 305 are of the same size or the sectional shapes are of the same size, the same resistance cannot be obtained. Hence, if it is desired to obtain the accurate resistance ratios in terms of circuits, the shapes in the upper part of the resistors 305 are made as mutually three-dimensionally same shaped unit bodies. Then, the restrictions on the pattern configurations slightly increase but the thin-film resistances of even and high resistances may be obtained. |
