| 摘要 |
PURPOSE:To easily form a mask and to prevent defects caused by multiple exposure in the border of chip regions by forming a tantalum oxide film as a semi light-transmitting film which also acts as a phase shifter in a light- shielding region on a transparent substrate. CONSTITUTION:The exposure mask consists of a tantalum oxide film 14 (transferred pattern) having 1500Angstrom film thickness formed in a light-shielding region on a transparent substrate 11 comprising quartz. Namely, a tantalum oxide film 12 having 1500Angstrom thickness is formed by sputtering on the transparent substrate 11. Then, a photoresist is applied, exposed to light, and developed to selectively form a resist film 13 in the light-shielding region. The obtd. resist film 13 is used as a mask to etch and remove the tantalum oxide film 12 by dry etching so that the transferred pattern 14 comprising the tantalum oxide film is formed on the light-shielding region. Then, the resist film 13 is removed to obtain a halftone mask. Thus, by forming only one layer, a semi light- transmitting film which also acts as a phase shifter can be formed. |
