发明名称 HEAT RESISTANT PHOTORESIST COMPOSITION, PHOTOSENSITIVE BASE MATERIAL AND PATTERN FORMING METHOD
摘要 PURPOSE:To improve sensitivity and resolution by incorporating a resin compo nent having a specific isoimide unit in the molecule and a compound capable of inducing a basic compound or an acidic compound by the irradiation of activated light. CONSTITUTION:This photoresist composition contains the resin component having the isoimide unit expressed by the formula given and the compound capable of inducing the basic compound or the acidic compound by the irradiation of activated light. In the formula, each of R1 and R2 expresses 4-valent and 2-valent aromatic or aliphatic hydrocarbon residual group respectively and the bonds shown by the arrows express a substitutional bond by isomerization. The resin component is used for the skeleton material of a formed resist film and contains preferably >=40mol% isoimide unit in the molecule. As the compound capable of inducing the basic compound by irradiation of activated light, 1,4-dihydropyridine derivative or the like is preferably used and is blended by 5-30 pts.wt. preferably 10-20 pts.wt., per 100 pts.wt. resin component.
申请公布号 JPH07134417(A) 申请公布日期 1995.05.23
申请号 JP19930256883 申请日期 1993.10.14
申请人 NITTO DENKO CORP 发明人 TOYODA HIDETSUGU;FUJII HIROFUMI;OMOTE TOSHIHIKO;HAYASHI SHUNICHI;MOCHIZUKI SHU
分类号 G03F7/004;G03F7/027;G03F7/038;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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