| 摘要 |
PURPOSE: To produce minute pattern having a satisfactory profile by decreasing a pattern loss in an area in which there is the undesired pattern loss caused by over exposure. CONSTITUTION: Concerning a mask pattern for forming a resist pattern through the method of photolithography, a mask pattern further provided with an additional pattern in the size of a degree not to form any resist pattern through exposure between these mask patterns is provided, and a method for forming the fine pattern, for which the profile is improved in the pattern of a special form by using this mask pattern, is provided. |
