发明名称 |
Method for cleaning semiconductor wafers |
摘要 |
A method for cleaning a substrate of the present invention, in which a plurality of substrates are placed substantially parallel with each other are dipped into a cleaning solution to remove particles adhering to each of the substrates, includes the step of dipping the substrates into the cleaning solution at a speed (V) through a surface of the cleaning solution, wherein the speed (V) for dipping the substrates into the cleaning solution, a minimum distance (l) among distances between the substrates, a length (L) of the substrates measured in a dip direction thereof, and a speed (v) at which the particles are transferred along the surface of the cleaning solution in a vertical direction with respect to back faces of the substrates satisfy the expression: lV>/=vL.
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申请公布号 |
US5415698(A) |
申请公布日期 |
1995.05.16 |
申请号 |
US19930084421 |
申请日期 |
1993.06.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUJINAGA, SUGAO;ARITA, NAOMI;DANSUI, YOSHITAKA |
分类号 |
H01L21/00;H01L21/306;(IPC1-7):B08B3/04 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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