| 摘要 |
PURPOSE:To make the connection to a bus good by making weight coefficient giving electrodes and busses of the same conductive materials and improving the dimension precision of minute-pattern weight coefficient giving electrodes. CONSTITUTION:After channel stop CS and gate SiO2 1 are provided on a Si substrate, poly-Si gate electrodes E1...En are selectively formed. The surface is covered with SiO2 2, and film 2 and gate electrodes in a prescribed part are etched. The surface is covered with SiO2 again, and Al is evaporated. Then, weight coefficient giving electrodes and busses are formed simultaneously by selectrive etching. Thus, transfer electrodes E1, E2, E3a, E3c...Ena and Enc are formed by poly-Si, and weight coefficient giving electrodes E3b and E6b...Enb and busses B1 and B2 are formed by A. By this method, weight coefficient giving electrodes can be formed with high precision, and the connection to busses is good. Further, when all electrodes and busses are made of the same conductive materials, the work function between substrate Si and transfer electrodes becomes uniform to be able to improve transfer efficiency. |
