Metal CVD process with post-deposition removal of alloy produced by CVD process

摘要

The invention is a method of reducing alloy particle contamination in processing a semiconductor workpiece having an underlying layer, a metal adhesion layer on the underlying layer and a metal contact layer overlying the adhesion layer, a peripheral portion of the adhesion layer near an edge of the workpiece being exposed and containing an alloy formed during deposition of the metal contact layer, the method including subjecting the workpiece to an etching agent so as to remove a portion of the metal contact layer and at least a portion of the alloy. In a preferred embodiment, the metal contact layer is thicker than the metal adhesion layer so that the method removes a large proportion of the alloy and a smaller proportion of the metal contact layer.