发明名称 Thermoelectric device utilizing nanoporous material
摘要 A nanoporous semiconductor material and fabrication technique for use as thermoelectric elements. Starting precursors are mixed in solution so as to thoroughly dissolve in solution which is then reduced. A second phase may be added in solution to provide nanoinclusions which may be subsequently removed. A nanoporous semiconductor is formed whereby lattice thermal conductivity is greatly reduced, due to enhanced phonon scattering on the order of 10 W/cmx DEG K. The nanoporous semiconductor material may be used as the n- and p- legs in a Peltier couple utilized for a thermoelectric cooler, a cryogenic cooler, thermoelectric power generator, or a thermoelectric heat pump.
申请公布号 US5411599(A) 申请公布日期 1995.05.02
申请号 US19940227741 申请日期 1994.04.12
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED THE SECRETARY OF THE ARMY 发明人 HORN, STUART B.;NELSON, ELIZABETH H.
分类号 H01L35/16;H01L35/34;(IPC1-7):H01L35/00;H01L35/02;H01L35/04 主分类号 H01L35/16
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