| 摘要 |
PURPOSE:To provide excellent liquid phase epitaxial crystal to be used for a light emitting diode, etc. CONSTITUTION:A liquid phase epitaxial device is formed by successively laminating a second slider 2 and a first slider 1 on a fixing plate 3 so as to slide from one another. Liquid phase epitaxial growth is performed on a substrate 15 in a recessed part 14 formed on the fixing plate 3 of the device. After well reducing the oxide material contained in the melt in the reservoirs 4, 5 and 6 by hydrogen, permit Al 22 and Zn 21 to be contained and completely remove unnecessary melt which adheres to the substrate 15 and crystal which does not contain impurities is provided. |
