INSULATED GATE TYPE FET AND MAKING METHOD THEREOF,申请号KR19920000763-传众专利搜索

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发明名称	INSULATED GATE TYPE FET AND MAKING METHOD THEREOF
摘要
申请公布号	KR950003936(B1)	申请公布日期	1995.04.21
申请号	KR19920000763	申请日期	1992.01.20
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	IM, BYONG - HAK;KIM, SON - JUN;LEE, TAE - HYONG;PARK, DONG - KON
分类号	H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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