Method for forming an insulation layer for a semiconductor component

摘要

The present invention discloses a method for forming an element insulation layer for a semiconductor component. During formation of a field-insulation layer, a contact-point oxide layer is formed which is intended to buffer the difference in the thermal propagation rates between a silicon substrate and a nitride layer. First and second lateral spaces are then formed, so that the flow of oxidant into the buffering contact-point oxide layer is retarded, and so that the shear stress which causes the damage is reduced. Consequently, the structural defect in the shape of a bird's beak is prevented, as a result of which a densely packed element region is ensured. Furthermore, the growth thickness during formation of the monocrystalline silicon is optimised, so that the component is planarised, which simplifies the method.