| 摘要 |
<p>A controllable conduction device, such as a FET transistor, has channel (12) for conventional mass charge carrier flow between a source (14) and a drain (15) region under the control of an overlying gate (16). Interdigitated fingers (17) are formed in the gate, which induce a multiple tunnel junction configuration in the channel, so that charge carrier transport in the channel is inhibited by Coulomb blockade when the device is turned off, thereby reducing the leakage current. <IMAGE></p> |
