METHOD FOR FILLING UP A CONTACT OF SEMICONDUCTOR DEVICE TO USE OF A SELECTIVE TUNGSTEN CHEMICAL VAPOR DEPOSITION PROCESS

摘要

The method comprises the steps of selective vapor depositing of tungsten in via contact of semiconductor device at 200-450 deg.C for 1-3 min. under 10-200 m torr, and exposing the deposited tungsten film in an air. The two steps are repeatly performed. The method prevents a selectivity loss generated in the tungsten depositing process.