| 摘要 |
PURPOSE: To reduce manufacturing cost, and to enable mass production by constituting a temperature-sensitive section of a highly-orientable diamond thin-film satisfying specified conditions formed by vapor synthesis. CONSTITUTION: A foundation layer 4 consisting of a highly-orientable diamond thin-film is synthesized on a silicon wafer 5 having an azimuth (100) by vapor synthesis. A temperature-sensitive section 3 composed of the highly orientable diamond thin-film of a P-type semiconductor is formed on the foundation layer 4 by selective growth technique. Ohmic electrodes 1 and lead wires 2 are formed to each temperature-sensitive section 3, the whole is separated into each thermistor unit, and the thermistors are obtained. 65% or more of a thin-film surface area is made up of the (100) crystal face of diamond in the highly orientable diamond thin-film configuring the temperature-sensitive section 3, and the difference (Δα,Δβ,Δγ) of Euler's angles simultaneously satisfies 1Δα1<=10 deg., 1Δβ1<=10 deg., 1Δγ1<=10 deg. even regarding an adjacent (100) crystal face. Accordingly, the thermistor having no change with time is mass-produced at low cost.
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