| 摘要 |
<p>PURPOSE:To increase ON characteristics and prevent leakage current from occurring at OFF without enlarging an occupied area, by dividing a channel layer formed between a source region and a drain region into a plurality of areas along its channel width. CONSTITUTION:A source electrode 405 and a drain electrode 404 formed on both sides of a gate electrode 402, respectively, in parallel thereto, are connected via a through hole provided respectively in a silicon nitride film 405 to a source region and a drain region formed in a semiconductor layer 401. An MIS transistor formed in this manner is formed by being split into a plurality of areas along a channel width as a channel layer formed between the source region and the drain region forms a groove 410 in the semiconductor layer 401. Consequently, there is an increase in the number of sides in each channel layer corresponding to its channel length, thus increasing an ON current.</p> |
