发明名称 |
Dauerhafte ohmische Kontakte für p-leitende, Tellur enthaltende II-VI-Halbleiterschichten. |
摘要 |
<p>A stable ohmic contact for thin films of p-type tellurium-containing II-VI semiconductors and photovoltaic devices incorporating such contacts. An ohmic contact according to the invention includes a contact-forming layer deposited on a p-type thin film of a tellurium-containing II-VI semiconductor. Preferably, the contact-forming layer is copper having a thickness of about 2 nanometers. An isolation layer is deposited on the contact-forming to isolate subsequently deposited layers from the thin film. The isolation layer may be carbon or a thin layer of nickel. A connection layer for attaching an external electrical conductor is deposited on the isolation layer. The connection layer may be aluminum, chromium or a layer of copper, provided a copper layer is covered with one of silver, aluminum or a thin layer of nickel, preferably covered with aluminum. The stable, ohmic contact may be used as a back contact in a photovoltaic device incorporating a thin film of a tellurium-containing II-VI semiconductor as one of the active semiconductor layers in the device.</p> |
申请公布号 |
DE3751113(D1) |
申请公布日期 |
1995.04.06 |
申请号 |
DE19873751113 |
申请日期 |
1987.12.18 |
申请人 |
THE STANDARD OIL CO., CLEVELAND, OHIO, US |
发明人 |
SZABO, LOUIS FRANK, GARFIELD HEIGHTS OHIO 44125, US;BITER, WILLIAM JOSEPH, KENNETT SQUARE PHILADELPHIA 19348, US |
分类号 |
G06F9/455;G06F9/34;G06F9/44;H01L21/28;H01L21/443;H01L31/0224;H01L31/073;H01L31/10;(IPC1-7):H01L21/441;H01L31/12;H01L31/02 |
主分类号 |
G06F9/455 |
代理机构 |
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主权项 |
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地址 |
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