| 摘要 |
The method includes the steps of forming a pad oxide film (32), a buffer layer (34), an oxidation stopper layer (36) of 1000 angstrom thickness and an ion implanting prevention layer (38) of 100 angstrom thicknes on a substrate (30) to form an opening part (37) into the layers (36,38), implanting channel stopper ions into the opening part (37) to form a channel stopper layer (39), and removing the layer (38) to form a field oxide film (40) on the layer (39) by a oxidation process, thereby forming a good device isolating film.
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