发明名称 |
Plasma generating apparatus |
摘要 |
On the inner surface of a chamber are circumferentially disposed three lateral electrodes at regular intervals. To the lateral electrodes are applied three high-frequency electric powers of 50 MHz, each differing in phase by approximately 120 DEG . On the bottom of the chamber is placed a sample stage serving as a second electrode, around which is provided a ring-shaped earth electrode. To the sample stage is applied high-frequency electric power of 13.56 MHz. The distance between each of the three lateral electrodes and the earth electrode is longer than the distance between the sample stage and the earth electrode.
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申请公布号 |
US5404079(A) |
申请公布日期 |
1995.04.04 |
申请号 |
US19930097230 |
申请日期 |
1993.07.27 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OHKUNI, MITSUHIRO;KUBOTA, MASAFUMI;NOMURA, NOBORU;NAKAYAMA, ICHIRO;TAMAKI, TOKUHIKO |
分类号 |
H01J37/32;(IPC1-7):H01J7/24 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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