| 摘要 |
An insulated gate field effect transistor with an integrated safety diode is described. The safety diode comprises opposite-type conductivity diode zones forming a low breakdown voltage PN-junction by reason of high dopant concentrations in the diode zones. The diode zone which is of the same type conductivity as the substrate completely surrounds the other diode zone and can thus serve as a channel interrupter preventing parasitic transistor action between the safety diode and the active zones of the field effect transistor. Other features include location of the diode zone of the same type conductivity as the substrate contiguous with the source electrode, and a metal layer on the surface short circuiting the PN-junction therebetween to directly connect the source to one of the zones of the safety diode.
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