| 摘要 |
PURPOSE:To inhibit a rise in a threshold current of a semiconductor laser and enhance the injection efficiency of electric current with regards to a semiconductor laser in structure where a resonator is formed in a slope area. CONSTITUTION:A multiple quantum barrier layer 25 is interposed between a clad layer 26 and an active layer 24 while an energy barrier height of the multiple quantum barrier layer 25 against holes is arranged so that an even area on both sides of a substrate 21 may be higher than the slope area of the substrate 21. |
