发明名称 Heterojunction bipolar transistor.
摘要 An HBT includes an MQB between a base and a collector as a part of the collector. The MQB has an energy band structure in which the height of the effective potential barrier of the MQB increases in steps from the base to the collector. Therefore, an electric field in a region of the collector in the vicinity of the base-collector interface is relaxed and intervalley scattering of electron is suppressed, whereby reduction in electron mobility due to the intervalley scattering is suppressed, reducing the collector transit time of electron.
申请公布号 EP0614227(A3) 申请公布日期 1995.03.29
申请号 EP19940102971 申请日期 1994.02.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIMURA TERUYUKI C O MITSUBISH;YOSHIDA NAOHITO C O MITSUBISHI
分类号 H01L29/205;H01L21/331;H01L29/73;H01L29/737 主分类号 H01L29/205
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