| 摘要 |
The method includes the steps of forming a trench (10) into the silicon substrate (1), forming a first thermal oxide film (5) on the bottom and wall of the trench (10) to form a first CVD oxide film (6) thereon, forming a first poly-Si layer (7) on the film (6) to grow a second CVD thermal oxide (8) film thereon to fill the trench with the second CVD oxide film, etching-back the oxide films (8,6) to the upper surface of silicon substrate, and forming a divice isolation film (20) as the films (5,6,8) in the trench (10), thereby not generating the cracks on the device isolation film (20) upon wet-etching.
|
