| 摘要 |
XeCl excimer laser annealing for activating a source/drain region of a MOS-FET is carried out without deforming a gate electrode. Generally, a reflectance of a thin film varies in accordance with a cycle of lambda /2n due to interference of an incident light and a reflection light. A difference of thickness d1 between a thickness d3 of the film for attaining a maximum reflectance and a thickness d2 for attaining a minimum reflectance is indicated by lambda /4n. Thus, a first SiO2 film pattern 8 of the thickness d1 is formed in advance on a gate electrode 7a, and a second SiO2 film 12 is formed on an entire surface of a wafer so that the thickness of the film on the source drain region (a high-concentration impurity diffused region 11 and an LDD region 9) becomes d2. Even under conditions for sufficient heating of the source/drain regions, heat generation of the gate electrode 7a can be controlled, thereby preventing deformation thereof.
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